Path:OKDatasheet > Semiconductor δελτίο > Ceramate Datasheet > 54S416T-6
54S416T-6 spec: High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6 Παρόμοια
- 54S416T-5
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 54S416T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 54S416T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
54S416T-6 Datasheet και Spec
Κατασκευαστής : Ceramate
Πακετάρισμα : TSOP
Pins : 54
Θερμοκρασία : Min 0 °C | Max 70 °C
Μέγεθος : 1126 KB
Εφαρμογή : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6 PDF Κατεβάστε