| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| C460-XB290-E1000-B | Cree | 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| CSD06060A | Cree | 600V; 6A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXE8C-LD00 | Cree | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C470-MB290-E1000 | Cree | 10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED |
| C470-XB290-E1000-A | Cree | 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| W4NXE8C-SD00 | Cree | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C503-MB290-E1000 | Cree | 8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| CXXX-MB290-S0100 | Cree | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| C460-UB290-E1000 | Cree | 5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED |
| CSD20060D | Cree | 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber |
| W4NRD8C-U000 | Cree | Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C460-XB290-E1000-A | Cree | 15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED |
| C405-XB900-A | Cree | 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| CRF-22010-001 | Cree | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| W4NXE4C-SD00 | Cree | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C527-MB290-E1000 | Cree | 7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| W4TRD0R-0D00 | Cree | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C490-CB290-E1000 | Cree | 2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED |
| C525-CB230-E1000 | Cree | 0.650W; colorgreen; 3.7V; low current InGaN LED |
| CSD01060A | Cree | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXE4C-LD00 | Cree | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD04060E | Cree | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| CSD10120D | Cree | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W6NXD3J-0000 | Cree | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W6NXD0K-0000 | Cree | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C470-XB900-A | Cree | 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C505-XB290-E1000-A | Cree | 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED |
| W4NRE0X-0D00 | Cree | Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4TXE0X-0D00 | Cree | Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W6NRE0X-0000 | Cree | Diameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
