| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N4738 | JGD | 1W zener diode. Nominal zener voltage 8.2V. 10% tolerance. |
| ZMM5248D | JGD | Surface mount zener diode. Nominal zener voltage 18 V. Test current 7.0 mA. +-20% tolerance. |
| 3EZ170D4 | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-4% tolerance. |
| RL206 | JGD | Silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2.0 A. |
| 3EZ47D5 | JGD | 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-5% tolerance. |
| SMBJ11 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 12.2 V (min), 14.9 V (max). Test current 1.0 mA. |
| P4KE11 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. |
| RL203G | JGD | Glass passivated rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 2.0 A. |
| 1N5917A | JGD | 1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-10% tolerance. |
| 1N5941A | JGD | 1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-10% tolerance. |
| 1N981D | JGD | 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. +-1% tolerance. |
| 1N4121 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 33V. |
| 3EZ4.7D5 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-5% tolerance. |
| 1N4004 | JGD | 1.0A silicon rectifier. Max recurrent peak reverse voltage 400V. |
| 1N978 | JGD | 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. +-20% tolerance. |
| 1N989A | JGD | 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
| P4KE43CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. Bidirectional. |
| SMAJ160A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. |
| 1N4735D | JGD | 1W zener diode. Nominal zener voltage 6.2V. 1% tolerance. |
| 1N4937 | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
| 1N4757A | JGD | 1W zener diode. Zener voltage 51V. |
| SMBJ8.5A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 9.44 V (min), 10.4 V (max). Test current 1.0 mA. |
| P4KE8.2CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. Bidirectional. |
| 3EZ20D5 | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-5% tolerance. |
| ZMM5225C | JGD | Surface mount zener diode. Nominal zener voltage 3.0 V. Test current 20 mA. +-10% tolerance. |
| SK110 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| 1N983C | JGD | 0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-2% tolerance. |
| SMBJ5930C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-2% tolerance. |
| SMBJ28CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 31.1 V (min), 34.4 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ91D10 | JGD | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-10% tolerance. |
