| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE110 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. |
| SMBJ5948C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 91 V. Test current 4.1 mA. +-2% tolerance. |
| SMAJ58A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. |
| IN5406 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
| KBPC604 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. |
| ZMM55-C39 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-5% tolerance. |
| UF5400 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A. |
| SK16 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 1.0 A. |
| BZX84C43 | JGD | 350mW zener diode, 43V |
| HER301G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| KBPC801 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| MMBD1405 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
| 1N4114D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 20V. 1% tolerance. |
| 3EZ22D3 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-3% tolerance. |
| F1A4 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 400 V. |
| 3EZ13D4 | JGD | 3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-4% tolerance. |
| 1N5526A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance. |
| ZMM5251B | JGD | Surface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-5% tolerance. |
| 3EZ62D2 | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-2% tolerance. |
| IN4944 | JGD | 1.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
| ZMM55-A15 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 13.8-15.6 V. Test current 5 mA. +-1% tolerance. |
| SMBJ170CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 209 V (max). Test current 1.0 mA. Bidirectional. |
| 1N5940D | JGD | 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-1% tolerance. |
| 1N5928D | JGD | 1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-1% tolerance. |
| SMBJ5929B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 15 V. Test current 25.0 mA. +-5% tolerance. |
| SMAJ36CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional. |
| 1N4763 | JGD | 1W zener diode. Nominal zener voltage 91V. 10% tolerance. |
| 3EZ150D10 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-10% tolerance. |
| 1N4103 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. |
| ZMM55-D3V9 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-20% tolerance. |
