| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| L6305 | Hamamatsu | 30W; L2D2 lamps deuterium lamp |
| G7881-44 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| R6836 | Hamamatsu | Spectral responce115-320nm; between anode and cathode1500Vdc; 0.01mA; photomultiplier tube |
| C5949 | Hamamatsu | Position sensor system |
| H7711-14 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| M4191 | Hamamatsu | Slow-speed streak unit ; temporal revolution better than 250ps |
| C8799 | Hamamatsu | Supply voltage +7V; data processing unit for NMOS linear image sensor data processing unit USB interface |
| P3257-10 | Hamamatsu | Allowable current40mA; MCT photoconductive detector 10um band infrared detector with high sensitivity and high-speed response |
| R2078 | Hamamatsu | Spectral responce 160 to 320nm; 2000Vdc; anode current 0.015mA; photomultiplier tube |
| G8522-01 | Hamamatsu | Reverse voltage30V; spectral response range470-870nm; InGaAs PIN photodiode high-speed response at low reverse voltage. For optical fiber communications, fiber channels and gigabit ethernet |
| G8195-12 | Hamamatsu | Spectral response range0.9-1.7um; reverse voltage20V; InGaAs PIN photodiode receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
| R550 | Hamamatsu | Spectral responce300-850nm; between anode and cathode1500Vdc; 0.3mA; photomultiplier tube |
| P1241-05 | Hamamatsu | 50Vdc; 30mW; CdS photoconductive cell standard type designed for general purpose, wide application |
| G1116 | Hamamatsu | Active area size2.7x2.7mm; reverse voltage5V; GaAsP photodiode - diffusion type. For visible light detection. For analytical instruments and color identification |
| R6834 | Hamamatsu | Spectral responce160-320nm; between anode and cathode1500Vdc; 0.01mA; photomultiplier tube |
| F4655-12 | Hamamatsu | compact MCP assembly (time of light). For TOF detector |
| C3704-02 | Hamamatsu | INputV 5Vdc; max current 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
| L2570 | Hamamatsu | 200W; super-quiet mercury-xenon lamp deep UV light source for precision measurement |
| L2656-03 | Hamamatsu | 80mA; 5V; 1.0A; high power GaAIAs infrared LED. For optical switches and automatic control systems |
| A7992 | Hamamatsu | Connector types BNC plug-BNC jack; power and singal cables, connector adapter |
| P8079-21 | Hamamatsu | 0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector |
| PLP10-130 | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
| K3413-05 | Hamamatsu | 5/20V; 1.5A; 0.2mW; 2-color detector. Wide spectral response range from UV through IR. For spectrophotometers, laser monitors, flame monitors and radiation thermometers |
| L8958-13 | Hamamatsu | Connector typeMU; 1.1V; 1.5mW; laser diode high output power 1.5mW, pigtail type. For optical fiber communications |
| R5496 | Hamamatsu | Spectral responce300-650nm; between anode and cathode3000Vdc; photomultiplier tube |
| R2693P | Hamamatsu | Spectral responce 185 to 850nm; 1250Vdc; anode current 0.1mA; photomultiplier tube |
| R2693 | Hamamatsu | Spectral responce 185 to 850nm; 1250Vdc; anode current 0.1mA; photomultiplier tube |
| C7190-12W | Hamamatsu | Number of pixels 512(H)x512(V); electron bombardment CCD camera |
| G8338 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| H7826P-01 | Hamamatsu | Input voltage 11.5-15.5V; max input current35mA; compact head-on PMT photosensor module |
