Path:OKDatasheet > Semiconductor δελτίο > HYNIX Datasheet > HY51VS18163HGT-7
HY51VS18163HGT-7 spec: Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns
HY51VS18163HGT-7 Παρόμοια
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGT-7 Datasheet και Spec
Κατασκευαστής : HYNIX
Πακετάρισμα : TSOP II
Pins : 44
Θερμοκρασία : Min 0 °C | Max 70 °C
Μέγεθος : 117 KB
Εφαρμογή : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns
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