Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-107
307URA250P4 ST303S08MFN1L SD153N12S15MBV IRF1302L SD203N10S10PC IRGPF40F IRFU3910 ST330S08P3 180RKI40 IRFPF50 SD150N14PC 303UR200P3 ST230S14P2L ST173S12PFK0 305UR160P4 ST300C18C1 ST280S04M0V SD453R12S30MTC 302UR160PD IRF7103QTR ST303S10MFN1L SD153R08S15PSV SD453R20S20PC SD253N10S
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
IRFS23N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A |
IRFR9014 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A |
307URA250P4 | IR | Standard recovery diode |
ST303S08MFN1L | IR | Inverter grade thyristor |
SD153N12S15MBV | IR | Fast recovery diode |
IRF1302L | IR | Power MOSFET, 20V, 174A |
SD203N10S10PC | IR | Fast recovery diode |
IRGPF40F | IR | Insulated gate bipolar transistor |
IRFU3910 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.115 Ohm, ID = 16A |
ST330S08P3 | IR | Phase control thyristor |
180RKI40 | IR | Phase control thyristor |
IRFPF50 | IR | HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A |
SD150N14PC | IR | Standard recovery diode |
303UR200P3 | IR | Standard recovery diode |
ST230S14P2L | IR | Phase control thyristor |
ST173S12PFK0 | IR | Inverter grade thyristor |
305UR160P4 | IR | Standard recovery diode |
ST300C18C1 | IR | Phase control thyristor |
ST280S04M0V | IR | Phase control thyristor |
SD453R12S30MTC | IR | Fast recovery diode |
302UR160PD | IR | Standard recovery diode |
IRF7103QTR | IR | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A |
ST303S10MFN1L | IR | Inverter grade thyristor |
SD153R08S15PSV | IR | Fast recovery diode |
SD453R20S20PC | IR | Fast recovery diode |
SD253N10S15MBV | IR | Fast recovery diode |
IRFSL33N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A |
45LR10 | IR | Standard recovery diode |
SD203N14S15MC | IR | Fast recovery diode |
IRF5M5210 | IR | HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A |