Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-107

307URA250P4 ST303S08MFN1L SD153N12S15MBV IRF1302L SD203N10S10PC IRGPF40F IRFU3910 ST330S08P3 180RKI40 IRFPF50 SD150N14PC 303UR200P3 ST230S14P2L ST173S12PFK0 305UR160P4 ST300C18C1 ST280S04M0V SD453R12S30MTC 302UR160PD IRF7103QTR ST303S10MFN1L SD153R08S15PSV SD453R20S20PC SD253N10S

IR Datasheets Κατάλογος-107

Μέρος αριθΚατασκευαστήςΕφαρμογή
IRFS23N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
IRFR9014 IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A
307URA250P4 IRStandard recovery diode
ST303S08MFN1L IRInverter grade thyristor
SD153N12S15MBV IRFast recovery diode
IRF1302L IRPower MOSFET, 20V, 174A
SD203N10S10PC IRFast recovery diode
IRGPF40F IRInsulated gate bipolar transistor
IRFU3910 IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.115 Ohm, ID = 16A
ST330S08P3 IRPhase control thyristor
180RKI40 IRPhase control thyristor
IRFPF50 IRHEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
SD150N14PC IRStandard recovery diode
303UR200P3 IRStandard recovery diode
ST230S14P2L IRPhase control thyristor
ST173S12PFK0 IRInverter grade thyristor
305UR160P4 IRStandard recovery diode
ST300C18C1 IRPhase control thyristor
ST280S04M0V IRPhase control thyristor
SD453R12S30MTC IRFast recovery diode
302UR160PD IRStandard recovery diode
IRF7103QTR IRN-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
ST303S10MFN1L IRInverter grade thyristor
SD153R08S15PSV IRFast recovery diode
SD453R20S20PC IRFast recovery diode
SD253N10S15MBV IRFast recovery diode
IRFSL33N15D IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
45LR10 IRStandard recovery diode
SD203N14S15MC IRFast recovery diode
IRF5M5210 IRHEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A

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