| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMAJ160 | MDE Semiconductor | 160.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-20D180M | MDE Semiconductor | 18V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc |
| SMLJ22A | MDE Semiconductor | 22.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE62 | MDE Semiconductor | 50.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE20 | MDE Semiconductor | 15.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ8.0 | MDE Semiconductor | 8.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW90 | MDE Semiconductor | 90.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMAJ75A | MDE Semiconductor | 75.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW180 | MDE Semiconductor | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1N6384 | MDE Semiconductor | 12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 3T230B | MDE Semiconductor | 190V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| SMLJ9.0 | MDE Semiconductor | 9.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-34S361K | MDE Semiconductor | 360V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| 3KP12A | MDE Semiconductor | 12.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMCJ90 | MDE Semiconductor | 90.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ17A | MDE Semiconductor | 17.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE100A | MDE Semiconductor | 85.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 15KW130 | MDE Semiconductor | 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ5.0A | MDE Semiconductor | 5.00V; 10mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ6.5A | MDE Semiconductor | 6.50V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-43.0C | MDE Semiconductor | 43.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE130 | MDE Semiconductor | 105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-53D911K | MDE Semiconductor | 910V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| SMDJ150A | MDE Semiconductor | 150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMCJ16 | MDE Semiconductor | 16.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| LCE17A | MDE Semiconductor | 17.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MDE-10D820K | MDE Semiconductor | 82V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| MDE-34S681K | MDE Semiconductor | 680V; max peak current40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
| 5KP14 | MDE Semiconductor | 14.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA60A | MDE Semiconductor | 60.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
