Path:okDatasheet > Semiconductor δελτίο > NTE Electronic Datasheet > NTE Electronic-83
588 NTE170 NTE264 NTE6068 NTE366 NTE1199 NTE290 NTE1441 NTE266 NTE2086 NTE1784 NTE326 NTE3047 NTE8182 NTE998 NTE5943 NTE3302 NTE5011T1 NTE6112 NTE5884 NTE5440 NTE273 NTE6403 NTE350 NTE56 NTE6020 NTE919D NTE1690
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
NTE5517 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A. |
NTE5177A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 5.1V. Zener test current Izt = 490mA. |
NTE588 | NTE Electronic | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. |
NTE170 | NTE Electronic | Single phase bridge rectifier, 2.0 Amp. Max recurrent peak reverse voltage 1000 V. Max average forward output current 2 A. |
NTE264 | NTE Electronic | Silicon complementary PNP transistor. Darlington power amplifier. |
NTE6068 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A. |
NTE366 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 25W @ 512MHz. |
NTE1199 | NTE Electronic | Integrated circuit. CMOS frequency divider. |
NTE290 | NTE Electronic | Silicon complementary PNP transistor. Audio power amplifier, switch. |
NTE1441 | NTE Electronic | Integrated circuit. FM IF amplifier, detector. |
NTE266 | NTE Electronic | Silicon NPN transistor. Darlington power amplifier. |
NTE2086 | NTE Electronic | Integrated circuit. 4-stage darlington array. |
NTE1784 | NTE Electronic | Integrated circuit. TV horizontal processor. |
NTE326 | NTE Electronic | Silicon P-channel JFET transistor. General purpose AF amplifier. |
NTE3047 | NTE Electronic | Optoisolator. TRIAC driver output |
NTE8182 | NTE Electronic | Thermal cut-off (thermal fuse). |
NTE998 | NTE Electronic | Integrated circuit. 1.22V reference diode. |
NTE5943 | NTE Electronic | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A. |
NTE3302 | NTE Electronic | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. |
NTE5011T1 | NTE Electronic | Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 5.6V, Zener test current Izt = 5mA. |
NTE6112 | NTE Electronic | Industrial rectifier. Repetitive voltae 1200V. Average forward current 500A. |
NTE5884 | NTE Electronic | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. |
NTE5440 | NTE Electronic | Silicon controlled rectifier (SCR). Isolated tab. Repetitive peak voltage Vrrm = 800V. RMS on-state current It = 9A. |
NTE273 | NTE Electronic | Silicon darlington complementary PNP power aplifier. |
NTE6403 | NTE Electronic | Integrated circuit. Silicon bilateral switch (SBS). |
NTE350 | NTE Electronic | Silicon NPN transistor. RF power amp, driver. |
NTE56 | NTE Electronic | Silicon NPN transistor. High gain switch and pass regulator. |
NTE6020 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. |
NTE919D | NTE Electronic | Integrated circuit. High speed dual comparator. |
NTE1690 | NTE Electronic | Integrated circuit. Telephone DTMF dialer. |