| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1.5SMCJ40CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 40V; Vbr(min/max) = 44.4/51.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 64.5V, @ Ipp = 23.2A |
| SD860T | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 8.0 A. |
| FL406 | PanJit | In-line miniature single phase silicon bridge. Max recurrent peak reverse voltage 600V. Max average rectified output current 4.0 A. |
| P6KE9.1 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 7.37V, Vbr(min/max) = 8.19/10.00V, It = 1 mA. |
| SD1020T | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| 3.0SMCJ9.0CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 9.0 V. Vbr(max/min) = 10.0/11.5 V @ It = 1.0 mA. Ir = 10 uA @ Vrwm. Vc = 15.4 V @ Ipp = 194.8 A. |
| SD520YS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 5 A. |
| 3EZ140 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 140 V. Izt = 5.3 mA. |
| P4SMAJ30CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 30 V. Breakdown voltage(min/max) 33.3/38.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 48.4 V. Peak pulse current 8.3 A. |
| P6SMBJ20C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 20 V. Vbr(min/max) = 22.2/28.1 V. It = 1.0 mA. Ir = 5 uA. Vc = 35.8 V. Ipp = 16.7 A. |
| P4KE150 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 121.00V, Vbr(min/max) = 135.00/165.00V, It = 1 mA. |
| 1.5SMCJ110CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 110V; Vbr(min/max) = 122/140.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 177V, @ Ipp = 8.4A |
| 2EZ51 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 51.0 V. Test current Izt = 9.8 mA. |
| BAL99W | PanJit | Surface mount switching diode. Power 200 mW. Reverse voltage 75 V. Rectified current 150 mA. |
| P6SMBJ110C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 196 V. Ipp = 3.0 A. |
| 3.0SMCJ200A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 200 V. Vbr(min/max) = 220/256.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 324 V @ Ipp = 9.3 A. |
| 3KP110 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 110.00 V. Vbr = 122.00 V (min), 154.50 V (max). It = 1 mA. |
| BZX84C13W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 13 V |
| P4KE13A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 11.10V, Vbr(min/max) = 12.40/13.70V, It = 1mA. |
| 1SMB5940 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 43 V. Test current Izt = 8.7 mA |
| GBU4B | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified output current at Tc=100degC 4.0 A, at Ta=40degC 3.0 A. |
| UF1600FCT | PanJit | Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 100degC 16.0 A. |
| P4SMAJ8.0 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 8.0 V. Breakdown voltage(min/max) 8.89/11.30 V. Test current 1.0 mA. Reverse leakage 50 uA. Max clamp voltage 15.0 V. Peak pulse current 26.5 A. |
| P4SMAJ210 | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 210 V. Breakdown voltage(min/max) 231/296.1 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 376 V. Peak pulse current 1.1 A. |
| BZT52-C3V9S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3.9 V |
| SD1030CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| 3KP5.0A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 5.0 V. Vbr = 6.40 V (min), 7.25 V (max). It = 10 mA. |
| GL3500 | PanJit | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 35 A. |
| PG608R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 800 A. Max average forward rectified current at Ta = 60degC 6.0 A. |
| SA75A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 75.00V, Vbr(min/max) = 83.30/95.80V, It = 1 mA. |
