| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| TSP090B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 90V. Breakover voltage 130V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| 1SMC5381 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 130 V. Test current Izt = 10 mA. |
| TSP140B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 140V. Breakover voltage 180V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| SA13CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 13.00V, Vbr(min/max) = 14.40/16.50V, It = 1 mA. |
| TSP220A | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 220V. Breakover voltage 300V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| 1U5G | PanJit | Glass passivated junction ultrafast switching rectifier. Current 1.0 A. Peak reverse voltage 600 V. |
| SD1040T | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| 3.0SMCJ12CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 12 V. Vbr(max/min) = 13.3/15.3 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 19.9 V @ Ipp = 150.6 A. |
| SD103BWS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Ta = 25degC 0.35 A. |
| P6SMBJ90C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 90 V. Vbr(min/max) = 100/126.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 160 V. Ipp = 3.8 A. |
| 1N4151W | PanJit | Surface mount switching diode. Peak reverse voltage 75V. Maximum average forward gurrent at Ta = 25degC 150mA |
| P4SMAJ210CA | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 210 V. Breakdown voltage(min/max) 231/268.8 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 340 V. Peak pulse current 1.2 A. |
| CM1004 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. |
| BZT52-C6V2S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 6.2 V |
| 3.0SMCJ8.0 | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 8.0 V. Vbr(max/min) = 8.89/11.30 V @ It = 1.0 mA. Ir = 50 uA @ Vrwm. Vc = 15.0 V @ Ipp = 200.0 A. |
| TSP190B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 190V. Breakover voltage 260V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| 1N5368B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 47V, Izt =25mA |
| 3KP5.0 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 5.0 V. Vbr = 6.40 V (min), 7.55 V (max). It = 10 mA. |
| 1SMB2EZ62 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 62.0 V. Test current Izt = 8.1 mA |
| S3J | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current at Tl = 75degC 3.0 A. |
| P6SMBJ8.5 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 8.5 V. Vbr(min/max) = 9.44/11.92 V. It = 1.0 mA. Ir = 10 uA. Vc = 15.9 V. Ipp = 37.7 A. |
| 3.0SMCJ16C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 16 V. Vbr(max/min) = 17.8/22.6 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 28.8 V @ Ipp = 104.2 A. |
| ED804CT | PanJit | Super fast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=75degC) 8.0A. |
| P6SMBJ130C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 231 V. Ipp = 2.6 A. |
| SA5.0A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 5.00V, Vbr(min/max) = 6.40/7.25V, It = 10 mA. |
| P4KE400A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 342.00V, Vbr(min/max) = 380.00/420.00V, It = 1 mA. |
| P4KE12 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 9.72V, Vbr(min/max) = 10.80/13.20V, It = 1mA. |
| CP2501 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A. |
| SD360T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 3 A. |
| 1SMB3EZ33 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 33 V. Test current Izt = 23 mA |
