Path:okDatasheet > Semiconductor δελτίο > PerkinElmer Datasheet > PerkinElmer-19
500PILO MD952 LHI1148 MH953 HSH2001CIEO MVS5410-10 PGP-574 C1952 VTL5C8 PE300B-10UV PE500DUV LHI807 VTB8441B HY-53 C1373 MVS2602 HSH1002GEO VTT1116 GPV-6322 MH1972 MH1343P VT20N2 HY-3202 RL1501LGO-711 VTR24F1 C1973 MH1953P VTE1291-1
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
VTD31AA | PerkinElmer | Alternate source/second source photodiode. Isc = 150-225 microA, Voc = 350 mV at H = 0.5 mW/cm2, 2850 K. |
C30921E | PerkinElmer | Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
HSH1500PILO | PerkinElmer | Lamp for photolithography. Power 1500 watts, current 65.2 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
MD952 | PerkinElmer | Ultra high sensivity gateable photomultiplier DC-module. 1/3 inche DC photosensor module. Window material quartz. Dark current/offset voltage 10pA/500microV @ 1 x 10^6 gain & 1V/20nA. |
LHI1148 | PerkinElmer | Quad element detector |
MH953 | PerkinElmer | 1/3 inche CPM module. Input voltage 5V to +5.5V DC. Window material UV glass. Dark current 250pA @ 5 x 10^7 gain. |
HSH2001CIEO | PerkinElmer | Lamp for photolithography. Power 2000 watts, current 77 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). |
MVS5410-10 | PerkinElmer | Mashine vision strobe. Input voltage 90-230 VAC 50/60 Hz. |
PGP-574 | PerkinElmer | Overvoltage spark gap. Static breakdown voltage range (min-max) 0.5-6 kV. |
C1952 | PerkinElmer | Channel photomultiplexer, 3/4 inche, window material quartz., dark current 2500 pA. |
VTL5C8 | PerkinElmer | Low cost axial VACTROL |
PE300B-10UV | PerkinElmer | Germax focused xenon arc lamp. Power 300 watts, current 22 amps (DC), operating voltage 13.5 volts (DC). |
PE500DUV | PerkinElmer | Germax xenon arc lamp. Power 500 watts, current 27 amps (DC), operating voltage 18.5 volts (DC). |
LHI807 | PerkinElmer | Single element detector |
VTB8441B | PerkinElmer | Process photodiode. Isc = 5 microA, Voc = 420 mV at H = 100 fc, 2850 K. |
HY-53 | PerkinElmer | Thyratron. Peak anode voltage epy 40 kV, peak anode current ib 5000 a, average anode current lb 4 Adc, RMS anode current lb 90 Aac. Seated height x tube width 5 x 4.5 inches. |
C1373 | PerkinElmer | Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 20000 pA. |
MVS2602 | PerkinElmer | Mashine vision strobe. Line input voltage 15 to 28 VDC, input current 4amps peak at 24 VDC, output voltage 200 to 750 volts, output power 43 watts(max). |
HSH1002GEO | PerkinElmer | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). |
VTT1116 | PerkinElmer | .050 inche NPN phototransistor. Light current(min) 2.0 mA at H = 20 fc, Vce = 5.0 V. |
GPV-6322 | PerkinElmer | Triggered vacuum gap. Static breakdown voltage 65 kV. |
MH1972 | PerkinElmer | 3/4 inche CPM module. Input voltage 5V to +5.5V DC. Window material quartz. Dark current 50000pA @ 5 x 10^7 gain. |
MH1343P | PerkinElmer | 1/2 inche CPM module. P-version. Input voltage 5V to +5.5V DC. Window material UV glass.Dark counts per second 40 cps(typ.). |
VT20N2 | PerkinElmer | Photoconductive cell |
HY-3202 | PerkinElmer | Thyratron. Peak anode voltage epy 32 kV, peak anode current ib 20000 a, average anode current lb 0.5 Adc, RMS anode current lb 47.5 Aac. Seated height x tube width 6.4 x 3 inches. |
RL1501LGO-711 | PerkinElmer | Linear CMOS spectroscopy sensor. 50 microm pitch, 2.5 mm aperture, 128 photodiode elements. |
VTR24F1 | PerkinElmer | Optoswitch. Matchbox retro with flying leads. LED emitter, photodarlington detector, long sensing rang. |
C1973 | PerkinElmer | Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 50000 pA. |
MH1953P | PerkinElmer | 3/4 inche CPM module. P-version. Input voltage 5V to +5.5V DC. Window material UV glass. Dark counts per second 400 cps(typ.). |
VTE1291-1 | PerkinElmer | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). |