AD706JR spec: +-18V; 650mW; dual picoampere inout current bipolar Op Amp. For low frequency active filters, precision instrumentation and integrators

AD706JR Παρόμοια

AD7001AS
- 0.3-7V; 450mW; LC2MOS GSM baseband I/O port. For digital cellular telephony, private mobole telephony, satellite baseband digitization
AD7002
- LC2MOS GSM Baseband 1/O Port
AD7002AS
- GSM baseband I/O port
AD7008
- Numerically Controlled Oscillator Employing a 32-Bit Phase Accumulator, Sine and Cosine Look-Up Tables and a 10-Bit DAC, CMOS
AD7008/PCB
- -0.3 to +7V; CMOS DDS modulator. For frequency synthesizers; frequency, phase or amplitude modulators; DDS tuning; digital modulation
AD7008AP20
- -0.3 to +7V; CMOS DDS modulator. For frequency synthesizers; frequency, phase or amplitude modulators; DDS tuning; digital modulation
AD7008JP50
- -0.3 to +7V; CMOS DDS modulator. For frequency synthesizers; frequency, phase or amplitude modulators; DDS tuning; digital modulation
AD7010
- CMOS JDC p/4 DQPSK Baseband Transmit Port

AD706JR Datasheet και Spec

Κατασκευαστής : ADI

Πακετάρισμα : SOIC

Pins : 8

Θερμοκρασία : Min 0 °C | Max 70 °C

Μέγεθος : 233 KB

Εφαρμογή : +-18V; 650mW; dual picoampere inout current bipolar Op Amp. For low frequency active filters, precision instrumentation and integrators