Path:OKDatasheet > Semiconductor δελτίο > Cree Datasheet > W4TRD8R-0D00
W4TRD8R-0D00 spec: Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Κατασκευαστής : Cree
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Εφαρμογή : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition