Path:OKDatasheet > Semiconductor δελτίο > GSI Datasheet > GS8161E36T-200
GS8161E36T-200 spec: 6.5ns 200MHz 512K x 36 pipelined and flow through synchronous SRAM
GS8161E36T-200 Παρόμοια
- GS8160Z18T-225I
- 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
- GS8180D18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
- GS8170LW72C-333
- 333MHz 256K x 72 18MB double late write sigmaRAM SRAM
- GS816036T-225
- 6ns 225MHz 512K x 36 18Mb synchronous burst SRAM
- GS818DV18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
- GS8160F36T-8.5
- 8.5ns 512K x 36 18MB synchronous burst SRAM
- GS816037T-200
- 200MHz 512K x 36 synchronous SRAM
- GS8160E36T-200
- 6.5ns 200MHz 512K x 36 synchronous burst SRAM
GS8161E36T-200 Datasheet και Spec
Κατασκευαστής : GSI
Πακετάρισμα : TQFP
Pins : 100
Θερμοκρασία : Min 0 °C | Max 70 °C
Μέγεθος : 1126 KB
Εφαρμογή : 6.5ns 200MHz 512K x 36 pipelined and flow through synchronous SRAM
GS8161E36T-200 PDF Κατεβάστε