Path:okDatasheet > Semiconductor δελτίο > Hamamatsu Datasheet > Hamamatsu-28
G5853-21 L8933-62 L7893-01 C3704 L8763-71 L7850-01 L8958-12 H7732-01 G5851-23 G8339-23 R5983 P687-02 G1961 G8338-02 L2274 P8212 R1767 L82311-32 R8486 G5852-103 G7751-02 H8569-04 L8828-72 C8366 R7311 C9069 L2421
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
P2750-08 | Hamamatsu | 0.2mW; allowable current6mA; MCT photoconductive detector non-cooled type and TE-cooled suitable for long, continuous operation |
G8795 | Hamamatsu | Supply voltage0.3-6V; InGaAs PIN photodiode with preamp 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
R6356 | Hamamatsu | Spectral responce185-900nm; new compact type PMT |
G5853-21 | Hamamatsu | Reverse voltage2V; spectral response range1.2-2.6um; InGaAs PIN photodiode long wavelength type (up to 2.6um). For NIR (near infrared) photometry, gas analyzer, spectrophotometer |
L8933-62 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
L7893-01 | Hamamatsu | 100-120V or 200-240V; UV-VIS fiber light source |
C3704 | Hamamatsu | INputV 10-30Vdc; max current 3mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
L8763-71 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
L7850-01 | Hamamatsu | Forward current80mA; 1V; 150mW; infrared LED peak emission wavelength1.45um. For light source for moisture meter, light source for photosensitive material |
L8958-12 | Hamamatsu | Connector typeFC; 1.1V; 1.5mW; laser diode high output power 1.5mW, pigtail type. For optical fiber communications |
H7732-01 | Hamamatsu | Input voltage 11.5-15.5V; max input current40mA; compact side-on PMT photosensor module |
G5851-23 | Hamamatsu | Reverse voltage2V; spectral response range0.9-1.7um; InGaAs PIN photodiode long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzer |
G8339-23 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
R5983 | Hamamatsu | Spectral responce185-710nm; between anode and cathode1250Vdc; 0.1mA; photomultiplier tube |
P687-02 | Hamamatsu | 100Vdc; 30mW; CdS photoconductive cell standard type designed for general purpose, wide application |
G1961 | Hamamatsu | Active area size1.1x1.1mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection |
G8338-02 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
L2274 | Hamamatsu | 8.5A; 18V; high precision lamp housing E7536 for 150W xenon lamps and mercury-xenon lamps |
P8212 | Hamamatsu | 20V; 1300mA; light emitting/receiving module. Infrared light emitting/receiving elements for automobile VICS |
R1767 | Hamamatsu | Spectral responce 400 to 1200nm; 1500Vdc; anode current 0.01mA; photomultiplier tube |
L82311-32 | Hamamatsu | 2V; 0.2mW; laser diode repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
R8486 | Hamamatsu | Spectral responce115-320nm; between anode and cathode1250Vdc; 0.1mA; photomultiplier tube |
G5852-103 | Hamamatsu | Reverse voltage2V; spectral response range0.9-2.1um; InGaAs PIN photodiode long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer |
G7751-02 | Hamamatsu | Active area 2mm; external input voltage+-18V; infrared detector module with preamplifier high sensitivity module of easy-to-use. For infrared detection |
H8569-04 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
L8828-72 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
C8366 | Hamamatsu | Supply voltage +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
R7311 | Hamamatsu | Spectral responce115-320nm; between anode and cathode1250Vdc; 0.01mA; photomultiplier tube |
C9069 | Hamamatsu | Supply voltage +18V; PSD signal processing circuit digital output for connection with PC |
L2421 | Hamamatsu | 50W; super-quiet mercury-xenon lamp deep UV light source for precision measurement |