| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| H7260K-01 | Hamamatsu | Spectral responce300-880nm; between anode and cathode800Vdc; linear array multianode PMT and assembly |
| C8060-01 | Hamamatsu | Supply voltage 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
| L6112-01 | Hamamatsu | 70mA; 5V; 0.6A; high input red LED. For optical switches, etc |
| R1705 | Hamamatsu | Spectral responce 300 to 650nm; 1800Vdc; anode current 0.02mA; photomultiplier tube |
| F2813-22 | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
| P8079-01 | Hamamatsu | 0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector |
| R821 | Hamamatsu | Spectral responce160-320nm; between anode and cathode1250Vdc; 0.01mA; photomultiplier tube |
| L7558 | Hamamatsu | Forward current100mA; 5V; high-speed, high power infrared LED for spatial light transmission. |
| H5783-04 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| L8347-22 | Hamamatsu | Connector typeFC ;2V; 0.1mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
| C7247 | Hamamatsu | InputV +-18V; DA-type socket assemblies |
| P930 | Hamamatsu | Supply voltage150Vdc; 50mW; CdS photoconductive cell hermetically sealed for high reliability |
| C4900 | Hamamatsu | Input current 14mA; output range 0-1250V; high voltage power supply unit |
