Path:OKDatasheet > Semiconductor δελτίο > ICSI Datasheet > IC61SF25636D-8.5TQ
IC61SF25636D-8.5TQ spec: 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
IC61SF25636D-8.5TQ Παρόμοια
- IC61SP12836-117B
- 117MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
- IC61LV12816-12T
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61S6432-133TQ
- 133MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IC61SF25632T-9.5TQ
- 9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM
- IC61C256AH-12J
- 12ns; 5V; 32K x 8; high-speed CMOS static RAM
- IC61LV12816-12TI
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61LV2568-12KI
- 12ns; 3.3V; 256K x 16 high-speed CMOS static RAM
- IC61SF12832-8.5TQI
- 8.5ns; 3.3V; 128K x 32 synchronous flow-through static RAM
IC61SF25636D-8.5TQ Datasheet και Spec
Κατασκευαστής : ICSI
Πακετάρισμα : TQFP
Pins : 100
Θερμοκρασία : Min 0 °C | Max 70 °C
Μέγεθος : 526 KB
Εφαρμογή : 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
IC61SF25636D-8.5TQ PDF Κατεβάστε