Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-157
ST180C04C0 70UFR120AYPD ST300C12C1 300U20A IRU1015CD 300HF80PB SD300R04MBC ST1230C16K1L ST300C04C3L ST733C04LHK3L SD153N08S15MV 300UF160YPD ST230C14C1 SD400N24PBC IRF5806 SD103R08S15MSC 309URA160P2 SD103N10S15MC ST183C08CHK0 IRG4BC20MD-S ST330S04P1 SD153R12S10MV ST1230C08K0L SD1
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
SD500N40PC | IR | Standard recovery diode |
307URA120 | IR | Standard recovery diode |
ST180C04C0 | IR | Phase control thyristor |
70UFR120AYPD | IR | Standard recovery diode |
ST300C12C1 | IR | Phase control thyristor |
300U20A | IR | Standard recovery diode |
IRU1015CD | IR | 1.5A low dropout positive adjustable regulator |
300HF80PB | IR | Standard recovery diode |
SD300R04MBC | IR | Standard recovery diode |
ST1230C16K1L | IR | Phase control thyristor |
ST300C04C3L | IR | Phase control thyristor |
ST733C04LHK3L | IR | Inverter grade thyristor |
SD153N08S15MV | IR | Fast recovery diode |
300UF160YPD | IR | Standard recovery diode |
ST230C14C1 | IR | Phase control thyristor |
SD400N24PBC | IR | Standard recovery diode |
IRF5806 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V |
SD103R08S15MSC | IR | Fast recovery diode |
309URA160P2 | IR | Standard recovery diode |
SD103N10S15MC | IR | Fast recovery diode |
ST183C08CHK0 | IR | Inverter grade thyristor |
IRG4BC20MD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A |
ST330S04P1 | IR | Phase control thyristor |
SD153R12S10MV | IR | Fast recovery diode |
ST1230C08K0L | IR | Phase control thyristor |
SD110OC08L | IR | Standard recovery diode |
ST303S04PFN0L | IR | Inverter grade thyristor |
ST280S04P0V | IR | Phase control thyristor |
307UR250 | IR | Standard recovery diode |
IRU1030-33CP | IR | 3A low dropout positive fixed 3.3V regulator |