| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SD600N20PC | IR | Standard recovery diode |
| PVU414S-T | IR | HEXFET power MOSFET photovoltaic relay |
| IRFR320 | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A |
| SD233R30S50MC | IR | Fast recovery diode |
| SD203N16S15PV | IR | Fast recovery diode |
| IRGBC30U | IR | Insulated gate bipolar transistor |
| ST780C04L0 | IR | Phase control thyristor |
| ST2100C30R2 | IR | Phase control thyristor |
| SD153R08S15MSV | IR | Fast recovery diode |
| SD150N04MBC | IR | Standard recovery diode |
| SD153N12S15MV | IR | Fast recovery diode |
| JANTXV2N6788 | IR | HEXFET power mosfet |
| 300UR160YPD | IR | Standard recovery diode |
| IRFR220N | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 600mOhm, ID = 5.0A |
| ST2600C22R1 | IR | Phase control thyristor |
| 300UFR120APD | IR | Standard recovery diode |
| 82RIA40M | IR | Phase control thyristor |
| 309U120P2 | IR | Standard recovery diode |
| SD150R16PSC | IR | Standard recovery diode |
| SD103R10S10MSC | IR | Fast recovery diode |
| SD103R10S20PSC | IR | Fast recovery diode |
| SD150N04MSC | IR | Standard recovery diode |
| IRFBC30AS | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A |
| IRG4PSH71KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A |
| SD103R08S10PSC | IR | Fast recovery diode |
| ST1200C12K0 | IR | Phase control thyristor |
| IRFPC60LC | IR | HEXFET power mosfet |
| IRF9610S | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A |
| 72UF160YPD | IR | Standard recovery diode |
| SD203R14S20MC | IR | Fast recovery diode |
