| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| ST730C12L1 | IR | Phase control thyristor |
| IRGBC30MD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| IRF7755 | IR | HEXFET power MOSFET. VDSS = -20V. RDS(on) = 51mOhm, ID = -3.7A @ VGS = -4.5V. RDS(on) = 86mOhm, ID = -2.8A @ VGS = -2.5V. |
| IRF7555 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm. |
| ST1200C18K1L | IR | Phase control thyristor |
| 302UFR160AYPD | IR | Standard recovery diode |
| IRGPC50UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| IRFP448 | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.60 Ohm, ID = 11 A |
| IRFU320 | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A |
| SD103N10S15PC | IR | Fast recovery diode |
| SD153N04S15PV | IR | Fast recovery diode |
| IRF9Z24NL | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A |
| 112RKI120 | IR | Phase control thyristor |
| SD253R08S20PBV | IR | Fast recovery diode |
| IRFBC20L | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A |
| IRF640L | IR | N-channel power MOSFET for fast switching applications, 200V, 18A |
| ST2600C20R1L | IR | Phase control thyristor |
| IRF3703 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 2.8 mOhm, ID = 210A |
| IRF140 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. |
| IRFIBE20G | IR | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 6.5 Ohm, ID = 1.4 A |
| SD400N16PSV | IR | Standard recovery diode |
| SD203N04S20PC | IR | Fast recovery diode |
| SD103R14S10PBC | IR | Fast recovery diode |
| ST180C12C2 | IR | Phase control thyristor |
| ST330C04L0L | IR | Phase control thyristor |
| ST1900C48R2 | IR | Phase control thyristor |
| IRFZ44V | IR | Power MOSFET, 60V, 55A |
| ST203S12PFJ2L | IR | Inverter grade thyristor |
| SD823C20S20C | IR | Fast recovery diode |
| ST1200C16K1 | IR | Phase control thyristor |
