| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| ST180S04M1L | IR | Phase control thyristor |
| SD203N25S10PBC | IR | Fast recovery diode |
| SD203R08S15PSC | IR | Fast recovery diode |
| ST203S10MFJ1L | IR | Inverter grade thyristor |
| CPV364MF | IR | IGBT SIP module |
| CPV363MU | IR | IGBT SIP module |
| 309UR80 | IR | Standard recovery diode |
| ST103S08PFN2 | IR | Phase control thyristor |
| SD153N08S15PSV | IR | Fast recovery diode |
| ST333S04PFM0 | IR | Inverter grade thyristor |
| ST330S14P3 | IR | Phase control thyristor |
| SD203R25S10MSC | IR | Fast recovery diode |
| SD103R14S15PSC | IR | Fast recovery diode |
| ST223S08MFN0L | IR | Inverter grade thyristor |
| IR2127 | IR | Current limiting single channel driver |
| IRFI840G | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.85 Ohm, ID = 4.6 A |
| IRG4PH20KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A |
| IRF5810 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V |
| SD403C12S15C | IR | Fast recovery diode |
| 305UR120P4 | IR | Standard recovery diode |
| 309UA120P5 | IR | Standard recovery diode |
| IRFR5505 | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A |
| IRF9540N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A |
| 309UA120 | IR | Standard recovery diode |
| IRGBC30M-S | IR | Insulated gate bipolar transistor |
| 200HFR80PV | IR | Standard recovery diode |
| ST700C22L0L | IR | Phase control thyristor |
| SD203N08S10PSC | IR | Fast recovery diode |
| SD150N20MSC | IR | Standard recovery diode |
| 303UR120P5 | IR | Standard recovery diode |
