IRF7706 spec: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V.

IRF7706 Παρόμοια

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7706 Datasheet και Spec

Κατασκευαστής : IR

Πακετάρισμα : TSSOP

Pins : 8

Θερμοκρασία : Min -55 °C | Max 150 °C

Μέγεθος : 167 KB

Εφαρμογή : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V.