Path:OKDatasheet > Semiconductor δελτίο > IR Datasheet > IRFR5505
IRFR5505 spec: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A
IRFR5505 Παρόμοια
- IRFR024N
- Power MOSFET, 55V, 17A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFR13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFR5505 Datasheet και Spec
Κατασκευαστής : IR
Πακετάρισμα : D-PAK
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 118 KB
Εφαρμογή : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A
IRFR5505 PDF Κατεβάστε