Path:OKDatasheet > Semiconductor δελτίο > Intersil Datasheet > FSYC360D
FSYC360D spec: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D Παρόμοια
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D Datasheet και Spec
Κατασκευαστής : Intersil
Πακετάρισμα :
Pins : 0
Θερμοκρασία : Min 0 °C | Max 0 °C
Μέγεθος : 84 KB
Εφαρμογή : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC360D PDF Κατεβάστε