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T10C110EF Παρόμοια

  • T10C110BF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 120mA,th min.
  • T10C110EF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 180mA,th min.
  • T10C140BF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 120V,max. Vbr = 140V,min @ 1uA, Holding carrent Ih = 120mA,th min.
  • T10C140EF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 120V,max. Vbr = 140V,min @ 1uA, Holding carrent Ih = 180mA,th min.
  • T10C180EF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 170V,max. Vbr = 180V,min @ 1uA, Holding carrent Ih = 180mA,th min.
  • T10C220BF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 200V,max. Vbr = 220V,min @ 1uA, Holding carrent Ih = 120mA,th min.
  • T10C220EF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 200V,max. Vbr = 220V,min @ 1uA, Holding carrent Ih = 180mA,th min.
  • T10C270EF
    • T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 240V,max. Vbr = 270V,min @ 1uA, Holding carrent Ih = 180mA,th min.

T10C110EF Datasheet και Spec

Κατασκευαστής : Littelfuse 

Πακετάρισμα :  

Pins : 3 

Θερμοκρασία : Min -40 °C | Max 150 °C

Μέγεθος : 87 KB

Εφαρμογή : T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 180mA,th min. 

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