Path:okDatasheet > Semiconductor δελτίο > MDE Semiconductor Datasheet > MDE Semiconductor-17
15KP75A 1.5KE110A MDE-14D221K MDE-25D511K 1.5KE170 SMDJ58 MDE-10D121K 20KW48 P4KE120A 3T064B P4KE6.8A MDE-10D680K MDE-25D821K P4KE43A 20KW216 SMLJ8.0A SMLJ18A MDE-10D621K MDE-32D911K 1N6388 SMAJ8.0A P6KE15A MAX-370 SMLJ7.5A 3KP28 SMDJ26A SMLJ75A
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
SMCJ17 | MDE Semiconductor | 17.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SA28A | MDE Semiconductor | 28.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
1.5KE22 | MDE Semiconductor | 17.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
15KP75A | MDE Semiconductor | 75V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
1.5KE110A | MDE Semiconductor | 94.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-14D221K | MDE Semiconductor | 220V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
MDE-25D511K | MDE Semiconductor | 510V; max peak current20000A; metal oxide varistor. Standard D series 25mm disc |
1.5KE170 | MDE Semiconductor | 138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
SMDJ58 | MDE Semiconductor | 58.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-10D121K | MDE Semiconductor | 120V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
20KW48 | MDE Semiconductor | 48.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
P4KE120A | MDE Semiconductor | 102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
3T064B | MDE Semiconductor | 58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
P4KE6.8A | MDE Semiconductor | 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-10D680K | MDE Semiconductor | 68V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
MDE-25D821K | MDE Semiconductor | 820V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
P4KE43A | MDE Semiconductor | 36.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
20KW216 | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMLJ8.0A | MDE Semiconductor | 8.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ18A | MDE Semiconductor | 18.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-10D621K | MDE Semiconductor | 620V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
MDE-32D911K | MDE Semiconductor | 910V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
1N6388 | MDE Semiconductor | 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
SMAJ8.0A | MDE Semiconductor | 8.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P6KE15A | MDE Semiconductor | 10.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MAX-370 | MDE Semiconductor | 333V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
SMLJ7.5A | MDE Semiconductor | 7.50V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
3KP28 | MDE Semiconductor | 28.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMDJ26A | MDE Semiconductor | 26.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ75A | MDE Semiconductor | 75.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |