| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| MDE-25S241K | MDE Semiconductor | 240V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 15KP200 | MDE Semiconductor | 200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SA16A | MDE Semiconductor | 16.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP64A | MDE Semiconductor | 64V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-53D471K | MDE Semiconductor | 470V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| SMDJ5.0 | MDE Semiconductor | 5.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMCJ22 | MDE Semiconductor | 22.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MPTE-12C | MDE Semiconductor | 12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE39 | MDE Semiconductor | 31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA11 | MDE Semiconductor | 11.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ51A | MDE Semiconductor | 51.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-25D681K | MDE Semiconductor | 680V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| 15KW130A | MDE Semiconductor | 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ8.5 | MDE Semiconductor | 8.50V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ24 | MDE Semiconductor | 24.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ51A | MDE Semiconductor | 51.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA75A | MDE Semiconductor | 75.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE12 | MDE Semiconductor | 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE11A | MDE Semiconductor | 9.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MAX20-11.0C | MDE Semiconductor | 11.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW160A | MDE Semiconductor | 160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ64 | MDE Semiconductor | 64.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3T130B | MDE Semiconductor | 120V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| MAX20-60.0CA | MDE Semiconductor | 60.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW24A | MDE Semiconductor | 24.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE180 | MDE Semiconductor | 146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SA6.5 | MDE Semiconductor | 6.50V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMAJ8.5 | MDE Semiconductor | 8.50V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-85.0C | MDE Semiconductor | 85.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MPTE-10 | MDE Semiconductor | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
