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BUL52A spec: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A Παρόμοια
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52A Datasheet και Spec
Κατασκευαστής : Magnatec
Πακετάρισμα : TO220
Pins : 3
Θερμοκρασία : Min 0 °C | Max 150 °C
Μέγεθος : 20 KB
Εφαρμογή : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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