Path:OKDatasheet > Semiconductor δελτίο > Micro Electronics Datasheet > 2N5367
2N5367 spec: 360mW PNP silicon transistor
2N5367 Παρόμοια
- 2N5307
- 400mW NPN darlington amplifier
- 2N5308
- 400mW NPN darlington amplifier
- 2N5367
- 360mW PNP silicon transistor
- 2N5367
- 360mW PNP silicon transistor
- 2N5368
- 500mW complementary silicon general purpose amplifier
- 2N5369
- 500mW complementary silicon general purpose amplifier
- 2N5370
- 500mW complementary silicon general purpose amplifier
- 2N5371
- 500mW complementary silicon general purpose amplifier
2N5367 Datasheet και Spec
Κατασκευαστής : Micro Electronics
Πακετάρισμα : TO-92B
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 62 KB
Εφαρμογή : 360mW PNP silicon transistor
2N5367 PDF Κατεβάστε