Path:OKDatasheet > Semiconductor δελτίο > Motorola Datasheet > MTB30N06VL
MTB30N06VL spec: TMOS V power field effect transistor
MTB30N06VL Παρόμοια
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB30N06VL Datasheet και Spec
Κατασκευαστής : Motorola
Πακετάρισμα : DPAK
Pins : 4
Θερμοκρασία : Min -55 °C | Max 175 °C
Μέγεθος : 288 KB
Εφαρμογή : TMOS V power field effect transistor
MTB30N06VL PDF Κατεβάστε