Path:OKDatasheet > Semiconductor δελτίο > Motorola Datasheet > MTB50N06V
MTB50N06V spec: TMOS V power field effect transistor D2PAK for surface mount
MTB50N06V Παρόμοια
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB50N06V Datasheet και Spec
Κατασκευαστής : Motorola
Πακετάρισμα : DPAK
Pins : 4
Θερμοκρασία : Min -55 °C | Max 175 °C
Μέγεθος : 317 KB
Εφαρμογή : TMOS V power field effect transistor D2PAK for surface mount
MTB50N06V PDF Κατεβάστε