MTW10N100E spec: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Παρόμοια

MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW14N50E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW16N40E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Datasheet και Spec

Κατασκευαστής : Motorola

Πακετάρισμα : TO-247AE

Pins : 4

Θερμοκρασία : Min -55 °C | Max 150 °C

Μέγεθος : 211 KB

Εφαρμογή : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole