Path:OKDatasheet > Semiconductor δελτίο > NEC Datasheet > NE4210S01-T1B
NE4210S01-T1B spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B Παρόμοια
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1B Datasheet και Spec
Κατασκευαστής : NEC
Πακετάρισμα : 4-pin u-x type mold
Pins : 0
Θερμοκρασία : Min 0 °C | Max 0 °C
Μέγεθος : 71 KB
Εφαρμογή : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Κατεβάστε