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NTE620 Παρόμοια

  • NTE60
    • Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
  • NTE6002
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6003
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6004
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6005
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6007
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
  • NTE6008
    • Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
  • NTE6009
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE620 Datasheet και Spec

Κατασκευαστής : NTE Electronic 

Πακετάρισμα :  

Pins : 2 

Θερμοκρασία : Min -65 °C | Max 175 °C

Μέγεθος : 17 KB

Εφαρμογή : Silicon rectifier, general purpose, high voltage, standard recovery (surface mount). Max recurrent peak reverse voltage 400V. Max average forward rectified current 0.5A. 

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