NTE6412 spec: Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 63V (typ).

NTE6412 Παρόμοια

NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6412 Datasheet και Spec

Κατασκευαστής : NTE Electronic

Πακετάρισμα : DO35

Pins : 2

Θερμοκρασία : Min -40 °C | Max 125 °C

Μέγεθος : 19 KB

Εφαρμογή : Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 63V (typ).