MGW21N60ED spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED Παρόμοια

MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED Datasheet και Spec

Κατασκευαστής : ON Semiconductor

Πακετάρισμα : TO-247

Pins : 3

Θερμοκρασία : Min 0 °C | Max 0 °C

Μέγεθος : 167 KB

Εφαρμογή : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel