BUK555-200B spec: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.

BUK555-200B Παρόμοια

BUK542-100A
- 100 V, power MOS transistor
BUK542-100A
- 100 V, power MOS transistor
BUK542-100B
- 100 V, power MOS transistor
BUK542-60A
- 60 V, power MOS transistor
BUK542-60B
- 60 V, power MOS transistor
BUK542-60B
- 60 V, power MOS transistor
BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
BUK543-100A
- 100 V, power MOS transistor

BUK555-200B Datasheet και Spec

Κατασκευαστής : Philips

Πακετάρισμα : TO220AB

Pins : 3

Θερμοκρασία : Min 0 °C | Max 175 °C

Μέγεθος : 76 KB

Εφαρμογή : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.