Path:OKDatasheet > Semiconductor δελτίο > Philips Datasheet > PHX10N40E
PHX10N40E spec: PowerMOS transistor. Avalanche energy rated.
PHX10N40E Παρόμοια
- PHX10N40E
- PowerMOS transistor. Avalanche energy rated.
- PHX10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX14NQ20T
- 200 V, N-channel trenchMOS transistor
- PHX15N06E
- 60 V, power MOS transistor
- PHX1N40
- 400 V, power MOS transistor
- PHX1N40E
- 400 V, power MOS transistor
- PHX1N60E
- 600 V, power MOS transistor isolated version of PHP1N60E
PHX10N40E Datasheet και Spec
Κατασκευαστής : Philips
Πακετάρισμα : SOT186A
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 82 KB
Εφαρμογή : PowerMOS transistor. Avalanche energy rated.
PHX10N40E PDF Κατεβάστε