Path:OKDatasheet > Semiconductor δελτίο > Philips Datasheet > PHX3N50E
PHX3N50E spec: PowerMOS transistor. Avalanche energy rated.
PHX3N50E Παρόμοια
- PHX3055E
- 55 V, N-channel trenchMOS transistor
- PHX3055L
- 60 V, power MOS transistor logic level FET
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
PHX3N50E Datasheet και Spec
Κατασκευαστής : Philips
Πακετάρισμα : SOT186A
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 79 KB
Εφαρμογή : PowerMOS transistor. Avalanche energy rated.
PHX3N50E PDF Κατεβάστε