F1206 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 Παρόμοια

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 Datasheet και Spec

Κατασκευαστής : Polyfet RF

Πακετάρισμα :

Pins : 2

Θερμοκρασία : Min -65 °C | Max 150 °C

Μέγεθος : 39 KB

Εφαρμογή : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor