Path:OKDatasheet > Semiconductor δελτίο > SANYO Datasheet > LC35V1000BM
LC35V1000BM spec: Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
LC35V1000BM Παρόμοια
- LC3517A-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517A-15
- 150ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-12
- 120ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-15
- 150ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-12
- 120ns, 2048-word x 8-bit CMOS static RAM (SRAM)
LC35V1000BM Datasheet και Spec
Κατασκευαστής : SANYO
Πακετάρισμα :
Pins : 0
Θερμοκρασία : Min 0 °C | Max 0 °C
Μέγεθος : 195 KB
Εφαρμογή : Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
LC35V1000BM PDF Κατεβάστε