RC30S10 spec: Silicon silastic cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.

RC30S10 Παρόμοια

RC30S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
RC30S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
RC30S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
RC30S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
RC30S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
RC30S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.

RC30S10 Datasheet και Spec

Κατασκευαστής : Shanghai Sunrise

Πακετάρισμα :

Pins : 0

Θερμοκρασία : Min -50 °C | Max 150 °C

Μέγεθος : 15 KB

Εφαρμογή : Silicon silastic cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.