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TC1027EPE Παρόμοια

  • TC1014-2.5VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1014-2.7VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1014-3.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
  • TC1014-3.3VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
  • TC1014-5.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
  • TC1015-2.5VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1015-2.7VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1015-3.0VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1027EPE Datasheet και Spec

Κατασκευαστής : TelCom Semiconductor 

Πακετάρισμα : Plastic DIP 

Pins : 16 

Θερμοκρασία : Min -40 °C | Max 85 °C

Μέγεθος : 30 KB

Εφαρμογή : Linear building block - quad low power comparator and voltage reference. 

TC1027EPE PDF Κατεβάστε