Path:OKDatasheet > Semiconductor δελτίο > WingShing Datasheet > BUT11A
BUT11A spec: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A Παρόμοια
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
- BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
- BUT12
- NPN silicon diffused power transistor. For switching power circuits
- BUT12A
- NPN silicon diffused power transistor. For switching power circuits
- BUT12AF
- NPN silicon diffused power transistor. For switching power circuits
BUT11A Datasheet και Spec
Κατασκευαστής : WingShing
Πακετάρισμα : TO-220
Pins : 3
Θερμοκρασία : Min 0 °C | Max 0 °C
Μέγεθος : 24 KB
Εφαρμογή : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A PDF Κατεβάστε