| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| ST330C08C0 | IR | Phase control thyristor |
| 309UR250 | IR | Standard recovery diode |
| ST330C14C2L | IR | Phase control thyristor |
| 303U80P3 | IR | Standard recovery diode |
| SD203R14S20PSC | IR | Fast recovery diode |
| IRFR9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A |
| IRF5N3415 | IR | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A |
| IRFDC20 | IR | HEXFET power MOSFET |
| IRG4BC20SD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A |
| ST083S08PFK2L | IR | Inverter grade thyristor |
| SD150N20PBC | IR | Standard recovery diode |
| 307UA160 | IR | Standard recovery diode |
| SD203R04S20MSC | IR | Fast recovery diode |
| SD253N16S20MSV | IR | Fast recovery diode |
| SD253R12S20PSV | IR | Fast recovery diode |
| IRFP22N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 22A. |
| 302UR120YPD | IR | Standard recovery diode |
| ST333C04CHK0 | IR | Inverter grade thyristor |
| IRFBF20S | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A |
| ST110S08P2L | IR | Phase control thyristor |
| ST303S08PFN0L | IR | Inverter grade thyristor |
| 130HF120MSV | IR | Standard recovery diode |
| IRFR9024TRL | IR | Power MOSFET, 60V, 8.8A |
| ST230S14P1 | IR | Phase control thyristor |
| 110RKI40 | IR | Phase control thyristor |
| ST333C08LHK0 | IR | Inverter grade thyristor |
| IRHN8130 | IR | HEXFET transistor |
| SD30OC08C | IR | Standard recovery diode |
| 300HFR80MS | IR | Standard recovery diode |
| SD203R04S10MSC | IR | Fast recovery diode |
