| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SD150N16PSV | IR | Standard recovery diode |
| IRG4PH40K | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A |
| IRHN7150 | IR | HEXFET transistor |
| IRGPC50MD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| 200HF80MV | IR | Standard recovery diode |
| SD233R30S50PC | IR | Fast recovery diode |
| ST180S12P1V | IR | Phase control thyristor |
| SD400OC34R | IR | Standard recovery diode |
| ST300C20C1L | IR | Phase control thyristor |
| ST303C08CHK1L | IR | Inverter grade thyristor |
| SD500N45MTC | IR | Standard recovery diode |
| ST3230C14R3L | IR | Phase control thyristor |
| SD453N25S30MTC | IR | Fast recovery diode |
| SD103R08S10MC | IR | Fast recovery diode |
| 305URA250 | IR | Standard recovery diode |
| IRHM7360SE | IR | HEXFET transistor |
| 301URA160P4 | IR | Standard recovery diode |
| IRFS33N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A |
| ST2600C24R0 | IR | Phase control thyristor |
| 302UF120PD | IR | Standard recovery diode |
| ST183S04PFN0 | IR | Inverter grade thyristor |
| IRF830AS | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
| 303URA160P3 | IR | Standard recovery diode |
| 305UA120P3 | IR | Standard recovery diode |
| SD153R14S15MBV | IR | Fast recovery diode |
| SD103R25S20PC | IR | Fast recovery diode |
| SD203N14S10PBC | IR | Fast recovery diode |
| JANTXV2N6847 | IR | HEXFET power mosfet |
| IRG4PC40W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A |
| IRF520NS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
