| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| IRLR120NTR | IR | N-channel power MOSFET, 100V, 10A |
| 305URA250P3 | IR | Standard recovery diode |
| SD203N04S10PC | IR | Fast recovery diode |
| IRF5Y3205CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.022 Ohm, ID = 18A |
| SD203R25S15MC | IR | Fast recovery diode |
| ST1900C48R1 | IR | Phase control thyristor |
| IR2127 | IR | Current limiting single channel driver |
| 302UR80A | IR | Standard recovery diode |
| SD600R08MTC | IR | Standard recovery diode |
| IRF634 | IR | Power MOSFET |
| ST780C04L3L | IR | Phase control thyristor |
| IRG4PC30U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A |
| ST730C18L0L | IR | Phase control thyristor |
| SD103N16S10PV | IR | Fast recovery diode |
| SD203N10S10MC | IR | Fast recovery diode |
| ST303C12LHK0 | IR | Inverter grade thyristor |
| IRL630S | IR | HEXFET power mosfet |
| 305UR250P4 | IR | Standard recovery diode |
| 70UR120AYPD | IR | Standard recovery diode |
| ST180S16M2 | IR | Phase control thyristor |
| SD203R14S20PC | IR | Fast recovery diode |
| CPV362MU | IR | IGBT SIP module |
| 300UR30A | IR | Standard recovery diode |
| IRF7700 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V. |
| ST203S10MFJ1 | IR | Inverter grade thyristor |
| 300UF160AYPD | IR | Standard recovery diode |
| SD500OC30R | IR | Standard recovery diode |
| IRFL9110 | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1A |
| SD153N08S10MBV | IR | Fast recovery diode |
| SD150R20MBC | IR | Standard recovery diode |
