| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE30C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional. |
| ZMM55-B8V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-2% tolerance. |
| 3EZ56D | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-20% tolerance. |
| 1N973C | JGD | 0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-2% tolerance. |
| KBU808G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
| FS1D | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ33C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. Bidirectional. |
| 1N984B | JGD | 0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-5% tolerance. |
| HER308G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5397 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
| SMBJ45C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 61.1 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ39D10 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-10% tolerance. |
| SMAJ7.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional. |
| 1N959A | JGD | 0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-10% tolerance. |
| 1N4002G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 100V. |
| SFA12G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| 1N5946A | JGD | 1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
| HER154 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| ZMM55-A3V0 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 2.8-3.3 V. Test current 5 mA. +-1% tolerance. |
| 1N4007 | JGD | 1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
| 3EZ8.2D10 | JGD | 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance. |
| SMAJ48A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. |
| P6KE8.2A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. |
| P4KE15CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V. Bidirectional. |
| 1N4622 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.9V. |
| 1N5399 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
| 1N976 | JGD | 0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-20% tolerance. |
| ZMM55-A3V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-1% tolerance. |
| FS2K | JGD | 1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 800V. |
| 1N4128 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 60V. |
