| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N970A | JGD | 0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-10% tolerance. |
| 3EZ18D | JGD | 3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-20% tolerance. |
| 1N5955D | JGD | 1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
| MMBZ5233B | JGD | Surface mount zener diode. Nominal zener voltage 6.0V, test current 20.0mA. |
| P6KE33C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional. |
| BZX84C2V7 | JGD | 350mW zener diode, 2.7V |
| SMAJ90C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. Bidirectional. |
| P4KE20 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. |
| ZMM55-A11 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 10.4-11.6 V. Test current 5 mA. +-1% tolerance. |
| P6KE120CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. Bidirectional. |
| HA13G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| DF10G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
| SF11LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
| KBPC802G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| ZMM55-B33 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-2% tolerance. |
| 1N978C | JGD | 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. +-2% tolerance. |
| 1N4743A | JGD | 1W zener diode. Zener voltage 13V. |
| 1N5521 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-20% tolerance. |
| KBP206G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| KBU606 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| P4KE27C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. Bidirectional. |
| S1M | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. |
| 3EZ82D4 | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-4% tolerance. |
| 1N987D | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-1% tolerance. |
| P4KE170C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
| SMAJ90A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. |
| 3EZ9.1D2 | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-2% tolerance. |
| 3EZ11D4 | JGD | 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-4% tolerance. |
| SMBJ7.0A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 8.60 V (max). Test current 10.0 mA. |
| 1N987C | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-2% tolerance. |
